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| savantic semiconductor product specification silicon npn power transistors BU2508D d escription with to-3pn package high voltage;high speed built-in damper diode applications for use in horizontal deflection circuits of colour tv receivers. pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 700 v v ebo emitter-base voltage open collector 7.5 v i c collector current 8 a i cm collector current-peak 15 a i b base current 4 a i bm base current-peak 6 a p c collector power dissipation t c =25 125 w t j junction temperature 150 t stg storage temperature -65~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BU2508D c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a; i b =0,l=25mh 700 v v (br)ebo emitter-base breakdown voltage i e =600ma; i c =0 7.5 13.5 v v ce (sat-1) collector-emitter saturation voltage i c =4.5a; i b =1.1a 5.0 v v ce (sat-2) collector-emitter saturation voltage i c =4.5a; i b =1.29a 1.0 v v be ( sat) base-emitter saturation voltage i c =4.5a; i b =1.7a 1.3 v i ces collector cut-off current v ce =rated; v be =0 t=125c 1.0 2.0 ma i ebo emitter cut-off current v eb =7.5v; i c =0 140 390 ma h fe-1 dc current gain i c =1a ; v ce =5v 7 13 23 h fe-2 dc current gain i c =4.5a ; v ce =1v 4 5.5 7.5 v f diode forward voltage i f =4.5a 1.6 2.0 v c c collector capacitance v cb =10v;f=1mhz 80 pf savantic semiconductor product specification 3 silicon npn power transistors BU2508D package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm) |
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